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Analysis of energy levels of InAs/GaAs self‐assembled quantum dots by using C – V and deep level transient spectroscopy
Author(s) -
Kim Jin Soak,
Kim Eun Kyu,
Kim Jun Oh,
Lee Sang Jun,
Noh Sam Kyu
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880628
Subject(s) - deep level transient spectroscopy , quantum dot , conduction band , capacitance , spectroscopy , activation energy , transient (computer programming) , optoelectronics , chemistry , energy (signal processing) , materials science , atomic physics , condensed matter physics , physics , electrode , electron , quantum mechanics , silicon , computer science , operating system
Energy levels of InAs/GaAs self‐assembled quantum dot (QD) system were analyzed by capacitance–voltage ( C – V ) and deep level transient spectroscopy (DLTS) methods. The QD signals were partially separated by DLTS measurement with small bias changing. The activation energies of QD signals were varied from 66 meV to 610 meV by changing of 0.6 V applied bias, which energies are related to the confined energy levels of InAs QDs. Then, the ground states of InAs QDs were considered to be located at 0.61 eV below the conduction band edge of GaAs barrier. In addition, it showed that DLTS signal of QDs are largely affected by their density of energy state. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)