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Tunneling current through g ‐factor engineered series quantum dots
Author(s) -
Tokura Yasuhiro,
Ono Keiji,
Tarucha Seigo
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880626
Subject(s) - quantum tunnelling , quantum dot , condensed matter physics , zeeman energy , zeeman effect , spin (aerodynamics) , coulomb blockade , biasing , phonon , physics , series (stratigraphy) , current (fluid) , voltage , spin current , chemistry , atomic physics , quantum mechanics , magnetic field , magnetization , transistor , paleontology , biology , thermodynamics
We evaluate resonant tunneling current via series quantum dots with different g ‐factors by Bloch equation method. We found that the resonant current is always singly peaked as a function of bias and its peak position depends on the gate voltage. When the rate of spontaneous phonon emission is very small, the shift of the peak positions between single spin transport and both spin transport corresponds to the half of the difference of the Zeeman energy. In contrast, when the phonon assisted tunneling predominates, the peak always appears at one of the resonant tunneling conditions for larger bias. These features are explained by spin blockade effect. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)