Strain effects, potential profiles, and electronic properties of InAs/GaAs coupled double quantum dots with a disk shape | Zendy

Kwon Hye Young | Zendy; Woo Jun Taek | Zendy; Lee Dea Uk | Zendy; Kim Tae Whan | Zendy; Park Young Ju | Zendy

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Strain effects, potential profiles, and electronic properties of InAs/GaAs coupled double quantum dots with a disk shape

Author(s) -

Kwon Hye Young,

Woo Jun Taek,

Lee Dea Uk,

Kim Tae Whan,

Park Young Ju

Publication year - 2009

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200880624

Subject(s) - quantum dot , strain (injury) , condensed matter physics , ellipsoid , photoluminescence , materials science , spectral line , electronic structure , transmission electron microscopy , molecular physics , chemistry , optoelectronics , physics , nanotechnology , quantum mechanics , medicine , astronomy

Strain potentials, potential profiles, and electronic subband energies of InAs/GaAs coupled double quantum dots (QDs) were calculated by using a finite‐difference method (FDM) taking into account shape‐based strain effects. The shape of the InAs/GaAs coupled double QDs on the basis of the transmission electron microscopy image was modeled to be a truncated hemi‐ellipsoid. The interband transition energies from the ground electronic subband to the ground heavy‐hole band (E 1 ‐HH 1 ) in the InAs/GaAs coupled double QDs, as determined from the FDM calculations taking into account strain effects, were in qualitatively reasonable agreement with the excitonic peaks corresponding to the (E 1 ‐HH 1 ) interband transition energies at several temperatures, as determined from the temperature‐dependent photoluminescence spectra. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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