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Strain effects, potential profiles, and electronic properties of InAs/GaAs coupled double quantum dots with a disk shape
Author(s) -
Kwon Hye Young,
Woo Jun Taek,
Lee Dea Uk,
Kim Tae Whan,
Park Young Ju
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880624
Subject(s) - quantum dot , strain (injury) , condensed matter physics , ellipsoid , photoluminescence , materials science , spectral line , electronic structure , transmission electron microscopy , molecular physics , chemistry , optoelectronics , physics , nanotechnology , quantum mechanics , medicine , astronomy
Strain potentials, potential profiles, and electronic subband energies of InAs/GaAs coupled double quantum dots (QDs) were calculated by using a finite‐difference method (FDM) taking into account shape‐based strain effects. The shape of the InAs/GaAs coupled double QDs on the basis of the transmission electron microscopy image was modeled to be a truncated hemi‐ellipsoid. The interband transition energies from the ground electronic subband to the ground heavy‐hole band (E 1 ‐HH 1 ) in the InAs/GaAs coupled double QDs, as determined from the FDM calculations taking into account strain effects, were in qualitatively reasonable agreement with the excitonic peaks corresponding to the (E 1 ‐HH 1 ) interband transition energies at several temperatures, as determined from the temperature‐dependent photoluminescence spectra. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)