Premium
Light‐emitting diode applications of colloidal CdSe/ZnS quantum dots embedded in TiO 2– δ thin film
Author(s) -
Kang SeungHee,
Huh HoonHoe,
Son KeeChul,
Lee ChangSoo,
Kim KyungHyun,
Huh Chul,
Kim EuiTae
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880615
Subject(s) - quantum dot , materials science , nanocrystal , electroluminescence , thin film , wafer , substrate (aquarium) , optoelectronics , diode , chemical vapor deposition , nanotechnology , light emitting diode , colloid , chemical engineering , layer (electronics) , oceanography , geology , engineering
We report the light‐emitting diode (LED) characteristics of colloidal core‐shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in TiO 2– δ thin films on Si substrate. High‐quality CdSe/ZnS QDs were synthesized via a pyrolysis in the range of 220–280 °C. The QDs were embedded in TiO 2– δ thin film at 200 °C by plasma‐enhanced metallorganic chemical vapor deposition. The diode structure of n‐TiO 2– δ /QDs/p‐Si showed electroluminescence characteristics, indicating the possibility of LED applications of colloidal CdSe/ZnS nanocrystal QDs embedded in oxide films on large‐area Si wafer. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)