Light‐emitting diode applications of colloidal CdSe/ZnS quantum dots embedded in TiO 2– δ    thin film | Zendy

Kang SeungHee | Zendy; Huh HoonHoe | Zendy; Son KeeChul | Zendy; Lee ChangSoo | Zendy; Kim KyungHyun | Zendy; Huh Chul | Zendy; Kim EuiTae | Zendy

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Light‐emitting diode applications of colloidal CdSe/ZnS quantum dots embedded in TiO 2– δ thin film

Author(s) -

Kang SeungHee,

Huh HoonHoe,

Son KeeChul,

Lee ChangSoo,

Kim KyungHyun,

Huh Chul,

Kim EuiTae

Publication year - 2009

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200880615

Subject(s) - quantum dot , materials science , nanocrystal , electroluminescence , thin film , wafer , substrate (aquarium) , optoelectronics , diode , chemical vapor deposition , nanotechnology , light emitting diode , colloid , chemical engineering , layer (electronics) , oceanography , geology , engineering

We report the light‐emitting diode (LED) characteristics of colloidal core‐shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in TiO 2– δ thin films on Si substrate. High‐quality CdSe/ZnS QDs were synthesized via a pyrolysis in the range of 220–280 °C. The QDs were embedded in TiO 2– δ thin film at 200 °C by plasma‐enhanced metallorganic chemical vapor deposition. The diode structure of n‐TiO 2– δ /QDs/p‐Si showed electroluminescence characteristics, indicating the possibility of LED applications of colloidal CdSe/ZnS nanocrystal QDs embedded in oxide films on large‐area Si wafer. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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