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Growth of GaSb dots on GaAs(100) by droplet epitaxy
Author(s) -
Kawazu Takuya,
Mano Takaaki,
Noda Takeshi,
Akiyama Yoshihiro,
Sakaki Hiroyuki
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880608
Subject(s) - quantum dot , photoluminescence , epitaxy , annealing (glass) , materials science , wafer , atomic force microscopy , optoelectronics , nanotechnology , composite material , layer (electronics)
We have studied the growth of GaSb quantum dots (QDs) on GaAs by droplet epitaxy. First, Ga droplets are formed on GaAs and then exposed to Sb flux to be clad by large granular crystals of Sb; by annealing this wafer at 380 °C, GaSb QDs are successfully formed. By atomic force microscopic studies, it is found that GaSb QDs thus formed are on average 9.2 nm in height, 74 nm in diameter, and 7.8 × 10 9 cm 2 in density. Photoluminescence properties of these QDs have been also investigated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)