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Three‐dimensional localization of excitons in the InAs/GaAs wetting layer – magnetospectroscopic study
Author(s) -
Babinski A.,
Golnik A.,
Borysiuk J.,
Kret S.,
Kossacki P.,
Gaj J. A.,
Raymond S.,
Potemski M.,
Wasilewski Z. R.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880601
Subject(s) - trion , exciton , zeeman effect , wetting layer , diamagnetism , condensed matter physics , wetting , magnetic field , biexciton , quantum dot , field (mathematics) , layer (electronics) , chemistry , physics , materials science , nanotechnology , quantum mechanics , mathematics , pure mathematics , thermodynamics
Magnetospectroscopic studies of individual excitonic states confined in potential fluctuations in the InAs/GaAs wetting layer (WL) are presented. A neutral exciton and a trion emission have been identified. They split in magnetic field in two components of orthogonal circular polarizations. The respective Zeeman splitting changes linearly with magnetic field up to 10 T. A significant scatter of the effective excitonic g *‐factor is observed, reflecting the distribution of sizes and compositions of potential fluctuations in the WL. The distribution affects also diamagnetic shift of the excitonic emission. The observed properties of the excitons are consistent with a picture of shallow quantum dots formed in the WL due to In composition fluctuations. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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