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Ordering of GaAs quantum dots by droplet epitaxy
Author(s) -
Mano Takaaki,
Kuroda Takashi,
Noda Takeshi,
Sakoda Kazuaki
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880591
Subject(s) - nucleation , quantum dot , annealing (glass) , photoluminescence , epitaxy , materials science , lattice (music) , optoelectronics , gallium arsenide , layer (electronics) , crystallography , condensed matter physics , nanotechnology , chemistry , physics , composite material , organic chemistry , acoustics
Step‐edge‐induced ordering of GaAs QDs was achieved on GaAs(110) by droplet epitaxy in a lattice‐matched GaAs/AlGaAs system. After the growth of an AlGaAs barrier layer, step‐edges along the 〈113〉, 〈112〉, 〈111〉, and 〈221〉 directions were naturally formed. On these step‐edges, preferential nucleation of Ga droplets occurred, resulting in the formation of one‐dimensionally ordered Ga droplets. By irradiating intense As 4 flux, we could form ordered GaAs QDs. Some of the arrays were longer than 1 μm and the QDs in the arrays were closely packed. After capping of the QDs followed by rapid thermal annealing, the ordered QD arrays exhibited strong photoluminescence emission. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)