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Ambient temperature dependence on emission spectrum of InAs quantum dots
Author(s) -
Ngo C. Y.,
Yoon S. F.,
Chua S. J.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880575
Subject(s) - photoluminescence , full width at half maximum , materials science , quantum dot , optoelectronics , emission spectrum , blueshift , arrhenius plot , spectral line , redshift , diode , quenching (fluorescence) , fluorescence , physics , optics , chemistry , activation energy , organic chemistry , quantum mechanics , astronomy , galaxy
Abstract Semiconductor superluminescent diodes (SLDs) are important broadband light source for fiber optic gyroscope and biomedical imaging. Quantum dots (QDs) have been proposed to be the best candidate for broadband light sources due to the inhomogeneous broadening of the gain spectrum as a result of the inherited size inhomogeneity of the self‐assembled QD growth. In this work, the effect of ambient temperature (25–100 °C) on the emission spectrum of InAs QDs with wideband emission was investigated. It was found that the full‐width at half‐maximum (FWHM) of the photoluminescence (PL) spectra remains more than 125 nm throughout the temperature range, and the redshift as function of temperature is approximately 0.27 meV/K. Activation energy of 270 meV is extracted from the Arrhenius plot and the PL quenching at high temperature is attributed to thermally induced carriers escaping out of the In 0.15 Ga 0.85 As strain‐reducing layer. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)