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Electrical properties of bulk n‐ZnO single crystals under hydrostatic pressure
Author(s) -
Kamilov I. K.,
Daunov M. I.,
Bashirov R. R.,
Gadjialiev M. M.,
Musaev A. M.,
Khokhlachev P. P.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880535
Subject(s) - electrical resistivity and conductivity , hydrostatic pressure , impurity , phase transition , phase (matter) , diamond anvil cell , hydrostatic equilibrium , materials science , analytical chemistry (journal) , electron , diamond , ionization , hall effect , chemistry , condensed matter physics , thermodynamics , high pressure , ion , metallurgy , physics , organic chemistry , chromatography , quantum mechanics
Pressure dependences of Hall coefficient R H ( P ) and resistivity ρ ( P ) have been measured for n‐ZnO bulk crystals with impurity concentration N i = 10 17 –10 18 cm –3 and concentration of free electrons ∼10 17 cm –3 at T = 300 K at hydrostatic pressures up to P = 25 GPa. It has been found that the exponential increase of R H ( P ) and ρ ( P ), observed in the vicinity of the polymorphous transition P PH = 9 GPa, is caused by the increase of ionization energy of shallow donors. At P > P PH , a step‐like decrease of the resistivity has been observed, indicating a phase transition from diamond structure to NaCl‐type structure. In accordance with formulas derived from the ‘heterophase structure – effective medium' model, phase volume fractions in the critical region of the polymorphous transformation have been calculated and the threshold values of normalized effective resistivity have been determined. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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