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About deep impurity centers in InAs
Author(s) -
Kamilov I. K.,
Daunov M. I.,
Bashirov R. R.,
Mollaev A. Yu.,
Arslanov R. K.,
Gabibov S. F.,
Arslanov T. R.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880534
Subject(s) - hydrostatic pressure , impurity , conduction band , pressure coefficient , acceptor , thermal conduction , condensed matter physics , hall effect , electrical resistivity and conductivity , chemistry , charge (physics) , charge carrier , hydrostatic equilibrium , electron , thermodynamics , physics , quantum mechanics , organic chemistry
Some characteristic parameters of charge carriers have been calculated for n‐InAs with a surplus donor concentration ∼10 16 cm –3 and for p‐InAs with a surplus donor concentration ∼10 16 cm –3 according to experimental data on hydrostatic pressure dependences of Hall coefficient R H and resistivity ρ at 300 K. It has been found that the pressure coefficients of energy gaps between the conduction‐band bottom and deep acceptor and resonance donor levels, located at a distance of ϵ a = –0.13 eV below and at a distance of ϵ d = 0.35 eV above the bottom of conduction band, respectively, are defined by a ‘motion’ of conduction band with the pressure. The energy of deep levels relative to absolute vacuum does not depend on pressure: pressure coefficients d ϵ a /d P ≈ d ϵ d /d P ≈ –95 meV/GPa. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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