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Electrical transport phenomena in magnesium‐doped p‐type GaN
Author(s) -
Konczewicz Leszek,
LitwinStaszewska Elżbieta,
Contreras Sylvie,
Piotrzkowski Ryszard,
Dmowski Lesław
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880521
Subject(s) - hydrostatic pressure , electrical resistivity and conductivity , doping , hall effect , magnesium , materials science , acceptor , ionization , analytical chemistry (journal) , hydrostatic equilibrium , condensed matter physics , chemistry , ion , optoelectronics , metallurgy , physics , thermodynamics , organic chemistry , quantum mechanics , chromatography
In this paper we present the resistivity and Hall‐effect measurements on p‐type GaN doped with Mg. The experiments were carried out as a function of hydrostatic pressure up to 1200 MPa in the temperature range 260–400 K. Both bulk GaN crystals as well as GaN:Mg epilayers were studied. In the investigated samples the decrease of resistivity and increase of hole concentration under pressure was observed. Such a behavior, which is contrary to the n‐type material, strongly suggests a decrease of the ionization energy of Mg acceptor ( E a = 183 meV) with pressure. This shift is very weak, less than –2 meV/GPa. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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