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Pressure and temperature tuning of InGaP/AlGaInP laser diodes from red to yellow
Author(s) -
Bercha A.,
Bohdan R.,
Trzeciakowski W.,
Dybała F.,
Piechal B.,
Sanayeh M. Bou,
Reufer M.,
Brick P.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880517
Subject(s) - diode , laser , atmospheric temperature range , optoelectronics , range (aeronautics) , high pressure , materials science , analytical chemistry (journal) , chemistry , optics , thermodynamics , composite material , physics , chromatography
Red laser diodes emitting at 636 nm and 645 nm are studied as a function of pressure up to 20 kbar and temperature from 300 K down to 80 K. The 636 nm samples reveal anomalous L – I – V dependence at low temperatures and at high pressures. The 645 nm samples do not show these anomalies and can be tuned by pressure and temperature down to 575 nm, i.e., in the 70 nm range with powers above 200 mW and low threshold currents. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)