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Strain‐induced nonlinear behavior of electron effective mass in degenerately doped n‐Si(P) under high uniaxial pressure X || [111]
Author(s) -
Shenderovskii Vasyl,
Baidakov Valentyn,
Budsuliak Sergii,
Gorin Andrii,
Ermakov Valerii,
Kolomoets Volodymyr,
Liarokapis Efthymios,
Gromova Galina,
Kazbekova B.,
Taimuratova L.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880509
Subject(s) - doping , effective mass (spring–mass system) , condensed matter physics , materials science , electron , conductivity , metal , nonlinear system , electrical resistivity and conductivity , strain (injury) , analytical chemistry (journal) , chemistry , electrical engineering , optoelectronics , physics , metallurgy , medicine , quantum mechanics , chromatography , engineering
The nonlinear behavior of the electron effective mass in degenerately doped n‐Si(P) under high uniaxial pressure X || [111] was observed in the range of the strain‐induced transition from metallic‐ to activation‐type conductivity. The relative contribution of the quadratic term in the effective mass vs. pressure dependence increases with doping. For just metallic crystals of n‐Si(P) the electron effective mass increase is described by only a single quadratic term. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)