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Effects of hydrostatic pressure on the conduction‐electron g ‐factor in GaAs–Ga 1– x Al x As quantum wells
Author(s) -
PorrasMontenegro N.,
Raigoza N.,
ReyesGómez E.,
Duque C. A.,
Oliveira L. E.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880505
Subject(s) - hydrostatic pressure , condensed matter physics , anisotropy , quantum well , electron , conduction band , thermal conduction , magnetic field , hamiltonian (control theory) , semiconductor , gallium arsenide , chemistry , physics , thermodynamics , optics , quantum mechanics , mathematical optimization , laser , mathematics
The effects of hydrostatic pressure on the conduction‐electron effective Landé g ‐factor in semiconductor GaAs–Ga 1– x Al x As quantum wells under growth‐direction and in‐plane magnetic fields are studied. Calculations are performed by using the Ogg–McCombe effective Hamiltonian in order to take into account the non‐parabolicity and anisotropy of the conduction band. Numerical results are obtained as functions of the ap‐ plied hydrostatic pressure and magnetic fields. Present results are in quite good agreement with experimental measurements in GaAs–Ga 1– x Al x As quantum wells in the absence of hydrostatic pressure, and indicate new possibilities for manipulating the electron‐effective g ‐factor in semiconductor low‐dimensional systems. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)