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Control of single quantum dot emission characteristics and fine structure by lateral electric fields
Author(s) -
Ulrich S. M.,
Hafenbrak R.,
Vogel M. M.,
Wang L.,
Rastelli A.,
Schmidt O. G.,
Michler P.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880331
Subject(s) - quantum dot , electric field , polarizability , fine structure , anisotropy , realization (probability) , interferometry , optoelectronics , exciton , condensed matter physics , materials science , physics , molecular physics , optics , molecule , quantum mechanics , statistics , mathematics
The spontaneous emission characteristics of individual self‐assembled (In,Ga)As/GaAs quantum dots have been investigated under the application of a tunable electric field in the lateral growth plane. For the neutral excitonic and bi‐excitonic as well as a singly‐charged (trionic) QD carrier configuration, similar quantum‐confined Stark effects could be observed, thus enabling a direct and comparative determination of corresponding polarizability values α . In addition we have applied a refined detection technique of high‐resolution Fabry–Pérot interferometry on single QDs to investigate the anisotropy‐induced excitonic fine structure and to monitor its tunability under a lateral electric field. Whereas most quantum dots reveal an oscillatory‐type modulation and partial reduction in fine structure under the applied field, we also demonstrate the case of a selected QD where the initial fine structure could even be reversibly tuned down to zero. This fine structure tunability of single QDs represents an essential prerequisite for the realization of individually controlled entangled photon sources in the future. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)