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White photoluminescence from Si/SiO 2 nanostructured film
Author(s) -
Duong P. H.,
Huy P. T.,
Ngan N. T. T.,
Tuan C. A.,
Itoh T.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200879816
Subject(s) - photoluminescence , materials science , luminescence , quenching (fluorescence) , laser , white light , analytical chemistry (journal) , optoelectronics , nanotechnology , optics , chemistry , fluorescence , physics , chromatography
We present in this work the results of PL measurement of Si‐NC embedded in Si/SiO 2 multilayer system. A very intense broad luminescence band was observed in the sample under illumination in vacuum by UV laser line. The PL intensity enhancement and quenching effect observed in different ambients can be attributed to the energy exchange from NC to MO. The storage of the annealed sample in vacuum for a long time drastically changed the PL properties of Si–NC. The origin of these phenomena will be discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)