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Electrical properties of C 4+ irradiated single‐walled carbon nanotube paper
Author(s) -
Skákalová Viera,
Kaiser Alan B.,
Dettlaff Ursula,
Arstila Kai,
Krasheninnikov Arkady V.,
Kein Juhani,
Roth Siegmar
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200879631
Subject(s) - irradiation , carbon nanotube , materials science , raman spectroscopy , electrical resistivity and conductivity , quantum tunnelling , metal , conductivity , ion , thermal conduction , analytical chemistry (journal) , molecular physics , nanotechnology , composite material , chemistry , optoelectronics , optics , physics , electrical engineering , engineering , organic chemistry , chromatography , nuclear physics , metallurgy
Single‐walled carbon nanotube (SWNT) networks have been irradiated with a 12 C 4+ ion beam (ion energy 23 MeV) to investigate changes to their properties. Measurements of the Raman D‐line show that the irradiation produces structural defects throughout SWNT paper of thickness 40 μm, with a linear increase in defects at the back side of the sample, but a saturating tendency occurring at the front (irradiated) side. The resistance of the samples also increases linearly with irradiation dose. The temperature dependence of the conductivity of the samples is changed progressively by the irradiation: whereas the pristine sample exhibits mixed metallic‐nonmetallic character consistent with the usual model of metallic conduction interrupted by thin barriers through which fluctuation‐assisted tunnelling occurs, the temperature dependence loses its metallic character and follows three‐dimensional variable‐range hopping for the most irradiated sample. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)