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Suspended and non‐suspended carbon nanotube transistors for NO 2 sensing – A qualitative comparison
Author(s) -
Helbling Thomas,
Hierold Christofer,
Durrer Lukas,
Roman Cosmin,
Pohle Roland,
Fleischer Maximilian
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200879599
Subject(s) - carbon nanotube field effect transistor , chemiresistor , carbon nanotube , substrate (aquarium) , field effect transistor , transistor , materials science , optoelectronics , nanotechnology , threshold voltage , voltage , electrical engineering , engineering , oceanography , geology
A qualitative comparison of the NO 2 sensitivity of carbon nanotube field effect transistors (CNFETs) has been performed on CNFETs with 1) suspended channels, and 2) channels that are in contact with the SiO 2 substrate. No significant response difference to NO 2 is apparent in the two CNFET configurations. Therefore, the SiO 2 substrate acting as a dominant indirect sensing mechanism can be ruled out. Additionally, two measurement modes in CNFETs are presented and discussed. The measurement modes are: 1) chemiresistor response, and 2) the shift of the CNFET gate characteristic toward positive gate voltages. A method is proposed to acquire the shift in the gate threshold for future CNFET sensor applications, and examples of such transduction curves of two sensors are presented. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)