Suspended and non‐suspended carbon nanotube transistors for NO 2  sensing – A qualitative comparison | Zendy

Helbling Thomas | Zendy; Hierold Christofer | Zendy; Durrer Lukas | Zendy; Roman Cosmin | Zendy; Pohle Roland | Zendy; Fleischer Maximilian | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Suspended and non‐suspended carbon nanotube transistors for NO 2 sensing – A qualitative comparison

Author(s) -

Helbling Thomas,

Hierold Christofer,

Durrer Lukas,

Roman Cosmin,

Pohle Roland,

Fleischer Maximilian

Publication year - 2008

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200879599

Subject(s) - carbon nanotube field effect transistor , chemiresistor , carbon nanotube , substrate (aquarium) , field effect transistor , transistor , materials science , optoelectronics , nanotechnology , threshold voltage , voltage , electrical engineering , engineering , oceanography , geology

A qualitative comparison of the NO 2 sensitivity of carbon nanotube field effect transistors (CNFETs) has been performed on CNFETs with 1) suspended channels, and 2) channels that are in contact with the SiO 2 substrate. No significant response difference to NO 2 is apparent in the two CNFET configurations. Therefore, the SiO 2 substrate acting as a dominant indirect sensing mechanism can be ruled out. Additionally, two measurement modes in CNFETs are presented and discussed. The measurement modes are: 1) chemiresistor response, and 2) the shift of the CNFET gate characteristic toward positive gate voltages. A method is proposed to acquire the shift in the gate threshold for future CNFET sensor applications, and examples of such transduction curves of two sensors are presented. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research