Premium
Effect of humidity on the hysteresis of single walled carbon nanotube field‐effect transistors
Author(s) -
Rinkiö Marcus,
Zavodchikova Marina Y.,
Törmä Päivi,
Johansson Andreas
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200879596
Subject(s) - hysteresis , materials science , carbon nanotube , dielectric , field effect transistor , transistor , gate dielectric , nanotechnology , relative humidity , optoelectronics , layer (electronics) , oxide , gate oxide , adsorption , humidity , electrical engineering , voltage , condensed matter physics , chemistry , physics , engineering , metallurgy , thermodynamics
Single walled carbon nanotube field‐effect transistors (SWCNT FETs) are attributed as possible building blocks for future molecular electronics. But often these transistors seem to randomly display hysteresis in their transfer characteristics. One reason for this is suggested to be water molecules adsorbed to the surface of the gate dielectric. In this study we investigate the hysteresis of SWCNT FETs at different relative humidities. We find that SWCNT FETs having atomic layer deposited (ALD) HfO 2 – TiO 2 – HfO 2 as a gate dielectric retain their ambient condition hysteresis better in dry N 2 environment than the more commonly used SiO 2 gate oxide. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)