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Drift effect of fluctuation enhanced gas sensing on carbon nanotube sensors
Author(s) -
Heszler Peter,
Gingl Zoltan,
Mingesz Robert,
Csengeri Attila,
Haspel Henrik,
Kukovecz Akos,
Kónya Zoltan,
Kiricsi Imre,
Ionescu Radu,
Mäklin Jani,
Mustonen Tero,
Tóth Géza,
Halonen Niina,
Kordás Krisztián,
Vähäkangas Jouko,
Moilanen Hannu
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200879581
Subject(s) - resistive touchscreen , carbon nanotube , noise (video) , materials science , analyte , semiconductor , spectral density , optoelectronics , silicon , nanotechnology , analytical chemistry (journal) , chemistry , electrical engineering , computer science , telecommunications , engineering , chromatography , artificial intelligence , image (mathematics)
A low‐noise electronic system is built and tested for fluctuation enhanced sensing. This latter is a new technique and based on the determination of the power spectral density of the stationary resistance fluctuations of semiconductor gas sensors. Its use is advantageous for improving the chemical selectivity of sensors. However, subsequent to an initial fast change of the sensor mean resistance, as a sensor is exposed to an analyte gas, a typical drift of the resistance can be observed. This effect hinders evolving stacionary conditions and thus acquiring fast measurements when applying fluctuation enhanced sensing. Therefore, this drift effect is studied both experimentally and theoretically. Functionalized carbon nanotube layers on silicon chips serve as active material for the experimental investigations. Power spectral density functions are measured and simulated numerically with and without drift conditions. The results are compared and the effect of resistive drift on fluctuation enhanced sensing is discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)