Premium
The determination of charge‐carrier lifetime in silicon
Author(s) -
Klein D.,
Wuensch F.,
Kunst M.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200879544
Subject(s) - silicon , interpretation (philosophy) , characterization (materials science) , charge (physics) , charge carrier , materials science , optoelectronics , carrier lifetime , engineering physics , analytical chemistry (journal) , nanotechnology , chemistry , physics , computer science , environmental chemistry , quantum mechanics , programming language
Contactless measurements of the photoconductance for the electrical characterization of silicon are discussed. The different techniques are presented and discussed. The theory for the interpretation of the measurements is given. By some exemplary experiments it is shown which information can be obtained from these measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)