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Magnetotransport through a magnetic semiconductor single electron transistor
Author(s) -
Lebedeva N.,
Kuivalainen P.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200844471
Subject(s) - condensed matter physics , magnetoresistance , curie temperature , magnetic semiconductor , electron , coulomb blockade , spins , transistor , semiconductor , scattering , magnetic field , spin (aerodynamics) , materials science , chemistry , physics , voltage , ferromagnetism , optoelectronics , quantum mechanics , optics , thermodynamics
The magnetic version of the Anderson model is applied to transport through a single electron transistor (SET), where the central region consists of a magnetic semiconductor weakly coupled to two nonmagnetic source and drain leads and a nonmagnetic gate electrode. We study theoretically magnetoresistance in a magnetic SET at various temperatures around the Curie temperature. The exchange interaction between the magnetic ions and the spins of the charge carriers causes spin disorder scattering, which results in temperature and magnetic field dependent level broadening in the central region of the SET. Consequently, a large magnetoresistance effect, whose sign and magnitude can be controlled by the gate voltage of the SET, appears at low temperatures. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)