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Investigation of the localization effect in InGaNAs/GaAs SQWs using the LSE model
Author(s) -
Abdoli Esmaeil,
Haratizadeh Hamid
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200844364
Subject(s) - laser linewidth , photoluminescence , condensed matter physics , materials science , spectral line , quantum well , thermal , nitrogen , liquid nitrogen , optoelectronics , physics , optics , thermodynamics , quantum mechanics , laser
Abstract In this paper, the temperature behaviors of photoluminescence (PL) spectra of as‐grown and annealed InGaASN/GaAs single quantum‐well (SQW) samples with different nitrogen levels have been investigated by means of the localized‐state ensemble (LSE) model. The variations of PL peak position and linewidth versus temperature are attributed to the creation of a fluctuation potential in the band edge of the host material from the nonuniform distribution of nitrogen in the structure. The anomalous thermal behaviors have been investigated by using the LSE model and a good agreement between experimental and theoretical results has been observed, especially at low temperature. The LSE model predicts a reduction of the localized states in rapid thermal annealed (RTA) samples compared to the as‐grown state.