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Combinatorial growth of Mg x Zn 1– x O epilayers by chemical vapor deposition
Author(s) -
Lautenschlaeger Stefan,
Sann Joachim,
Klar Peter J.,
Piechotka M.,
Meyer Bruno K.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200844347
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , substrate (aquarium) , epitaxy , photoluminescence , analytical chemistry (journal) , thin film , metal , materials science , deposition (geology) , chemistry , nanotechnology , metallurgy , optoelectronics , environmental chemistry , oceanography , layer (electronics) , geology , paleontology , sediment , biology
It was our aim to explore the growth of Mg x Zn 1– x O epilayers on ZnO substrates using CVD at substrate temperatures around 650 °C which is considerably lower than necessary for the MOCVD growth which requires substrate temperatures above 900 °C. Metallic precursors (Zn, Mg) were used together with NO 2 as oxygen precursor. The Mg content was determined from the shift of longitudinal optical phonon line as a function of the Mg composition. The properties of the films were investigated by low temperature photoluminescence. Epitaxial Mg x Zn 1– x O films with fixed Mg compositions required an individual adjustment of the Mg reservoir temperature. We, therefore, explored the possibility of a combinatorial growth i.e. achieving a Mg gradient within one sample. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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