Single versus double ion implantation: a deep level study | Zendy

Alfieri G. | Zendy; Kimoto T. | Zendy

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Single versus double ion implantation: a deep level study

Author(s) -

Alfieri G.,

Kimoto T.

Publication year - 2009

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200844342

Subject(s) - deep level transient spectroscopy , acceptor , annealing (glass) , ion , materials science , capacitance , ion implantation , optoelectronics , analytical chemistry (journal) , chemistry , silicon , condensed matter physics , physics , metallurgy , electrode , organic chemistry , chromatography

We performed a comparison study of electrically active defects generated in single and double ion implantated 4H‐SiC epilayers. Capacitance–voltage ( C – V ) and deep level transient spectroscopy (DLTS) measurements revealed that dou‐ ble implantation, is responsible for a different compensation mechanism of the net‐acceptor concentration, and for the different nature and annealing behavior of the detected deep levels. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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