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Single versus double ion implantation: a deep level study
Author(s) -
Alfieri G.,
Kimoto T.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200844342
Subject(s) - deep level transient spectroscopy , acceptor , annealing (glass) , ion , materials science , capacitance , ion implantation , optoelectronics , analytical chemistry (journal) , chemistry , silicon , condensed matter physics , physics , metallurgy , electrode , organic chemistry , chromatography
We performed a comparison study of electrically active defects generated in single and double ion implantated 4H‐SiC epilayers. Capacitance–voltage ( C – V ) and deep level transient spectroscopy (DLTS) measurements revealed that dou‐ ble implantation, is responsible for a different compensation mechanism of the net‐acceptor concentration, and for the different nature and annealing behavior of the detected deep levels. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)