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Pyroelectric properties of RbTiOAsO 4 single crystals in the 4.2–300 K temperature range
Author(s) -
Shaldin Yu. V.,
Matyjasik S.,
Tseitlin M.,
Mojaev E.,
Roth M.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200844294
Subject(s) - pyroelectricity , atmospheric temperature range , impurity , temperature coefficient , conductivity , materials science , electrical resistivity and conductivity , ion , analytical chemistry (journal) , chemistry , ferroelectricity , thermodynamics , dielectric , optoelectronics , physics , organic chemistry , chromatography , composite material , electrical engineering , engineering
The temperature dependence of the pyroelectric coefficient, γ s , of RbTiOAsO 4 single crystals grown by seeded pulling from high‐temperature self‐fluxes has been studied in the low‐temperature range. The results show that in the 4.2–250 K temperature range the γ s ( T ) behavior is similar to those of the isomorphic crystals belonging to the KTP (KTiOPO 4 ) family of compounds, and at temperature of 250 K the RTA pyroelectric coefficient γ s = –(5.6 ± 0.3) × 10 –5 C/m 2 K. However, at temperatures above 275 K, the superionic conductivity increases significantly, while the electrical conductivity originating from the release of charge carriers associated with trace impurity point defects increases additionally above room temperature. These effects have been taken into account in experimental evaluation of the true γ s values, especially above 275 K. The peculiarities revealed in the RTA pyroelectric coefficient temperature dependence are also discussed in terms of the structural changes associated with the temperature increase and isomorphic ion substitutions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)