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Carrier density and effective mass calculations in carbon nanotubes
Author(s) -
Marulanda Jose M.,
Srivastava Ashok
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200844259
Subject(s) - carbon nanotube , materials science , doping , carbon fibers , work (physics) , carbon nanotube field effect transistor , range (aeronautics) , nanotechnology , carbon nanotube quantum dot , nanotube , field effect transistor , chemical physics , transistor , optoelectronics , chemistry , thermodynamics , composite material , physics , composite number , quantum mechanics , voltage
In this work, the intrinsic carrier concentration and doping effects have been investigated for different carbon nanotubes. Electronic structure and the density of states functions have been utilized to derive analytical equations for the carrier concentration under high and low doping concentrations. The temperature dependence has also been investigated. The results show how varying diameters and wrapping angles of carbon nanotubes change their concentration profile. The implications of these results allow us to use the same material (carbon nanotube) for a wide range of applications only by varying the chiral vector ( n , m ). The calculations performed in this work set an upper limit for a wide range of applications including carbon nanotube interconnects and carbon nanotube field effect transistors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)