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Theoretical calculations of nonlinear electronic transport behavior in III‐nitrides: GaN and AlN
Author(s) -
Rodrigues Clóves G.,
Vasconcellos Áurea R.,
Luzzi Roberto
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200844157
Subject(s) - electric field , non equilibrium thermodynamics , nonlinear system , condensed matter physics , electron , nitride , impurity , exponential function , materials science , electron mobility , field (mathematics) , thermodynamic equilibrium , thermal , doping , chemistry , thermodynamics , physics , nanotechnology , quantum mechanics , mathematics , mathematical analysis , layer (electronics) , pure mathematics
The dependence of the mobility in n‐doped III‐nitrides on the electric field strength and the concentration of electrons and impurities is derived. Such dependence is determined by the nonequilibrium thermodynamic state of the system, which is led to far‐from equilibrium conditions by the action of intermediate to strong electric fields. It is shown that the mobility decreases with the increase of the electric field strength and the concentration of carriers, in a way evidencing the influence of the nonlinear transport involved. Dependence of the mobility with the concentration following two types of regimes characterized by exponential laws are evidenced. They can also be approximately described by fractional power laws. The influence of the thermal bath temperature is also analyzed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)