Premium
Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts
Author(s) -
Reshanov Sergey A.,
Emtsev Konstantin V.,
Speck Florian,
Gao KunYuan,
Seyller Thomas K.,
Pensl Gerhard,
Ley Lothar
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200844083
Subject(s) - schottky barrier , ohmic contact , materials science , schottky diode , graphite , fermi level , x ray photoelectron spectroscopy , metal–semiconductor junction , layer (electronics) , band gap , analytical chemistry (journal) , condensed matter physics , optoelectronics , nanotechnology , chemistry , electron , composite material , nuclear magnetic resonance , physics , diode , quantum mechanics , chromatography
Photoelectron spectroscopy and electrical measurements were used to study the graphite/SiC‐interface with emphasis on the Schottky barrier formation. The investigations revealed a strong dependence of the Schottky barrier height on the surface polarity of SiC. In the case that the graphite layer was prepared on the Si(0001)‐face of n‐/p‐type 4H‐ and n‐/p‐type 6H‐SiC, the Fermi level is pinned close to the conduction band edge at the interface. The Schottky barrier fabricated on n‐type 4H‐SiC (0001) is 0.6 eV, whereas on n‐type 6H‐SiC (0001) it is lower and amounts (0.3–0.55) eV. On p‐type 4H‐/6H‐SiC, the Schottky barrier is 2.6 eV and (2.3–2.7) eV, respectively. When the Schottky barrier is prepared on the C‐face (000 $ \bar 1 $ ) of n‐type 6H‐SiC, the Fermi level is pinned close to the middle of the band gap. In this case, the Schottky barrier height is found to be equal to 1.4 eV. It is demonstrated that the carbon/graphite formation at the interface between metal and n‐type 4H‐SiC does not ensure ohmic behavior. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)