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Analysis of interface trap parameters from double‐peak conductance spectra taken on N‐implanted 3C‐SiC MOS capacitors
Author(s) -
Krieger M.,
Beljakowa S.,
Trapaidze L.,
Frank T.,
Weber H. B.,
Pensl G.,
Hatta N.,
Abe M.,
Nagasawa H.,
Schöner A.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200844062
Subject(s) - conductance , capacitor , spectral line , trap (plumbing) , materials science , analytical chemistry (journal) , band gap , atomic physics , molecular physics , optoelectronics , chemistry , voltage , condensed matter physics , electrical engineering , physics , chromatography , astronomy , meteorology , engineering
Abstract 3C‐SiC/SiO 2 capacitors are fabricated by over‐oxidation of an implanted Gaussian nitrogen (N) profile and investigated by conductance spectroscopy. An unexpected double peak structure is observed in the conductance spectra indicating two types of independent traps at different energy positions in the bandgap, which change their charge state with identical time constant. A theoretical model is developed assuming two independent distributions of interface traps in the bandgap of 3C‐SiC with different trap parameters. The experimental G / ω – V and C – V spectra are simulated and the trap parameters are determined on the basis of this model. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)