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Phase separation in SiO x films annealed under enhanced hydrostatic pressure
Author(s) -
Rudko G. Yu.,
Maidanchuk I. Yu.,
Indutnyy I. Z.,
Misiuk A.,
Gule E. G.,
Shepeliavyi P. E.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200844049
Subject(s) - photoluminescence , annealing (glass) , suboxide , analytical chemistry (journal) , materials science , hydrostatic pressure , crystallization , stoichiometry , decomposition , silicon , infrared spectroscopy , chemical engineering , chemistry , optoelectronics , metallurgy , chromatography , thermodynamics , engineering , physics , organic chemistry
The effect of enhanced hydrostatic pressure (HP, (10–12) × 10 8 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450–1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP stimulates decomposition of non‐stoichiometric SiO x most efficiently at about 450 °C. In spite of enhanced SiO x decomposition, visible photoluminescence appears in HP‐treated samples at higher annealing temperatures in comparison to those annealed under ambient pressure (AP, 10 5 Pa). Contrary to that, application of HP results in essential enhancement of near‐infrared emission at lower annealing temperatures as compared to processing under AP. This can be related to pressure‐stimulated crystallization of Si inclusions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)