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Three‐phonon Umklapp process in silicon nanowires with square cross sections
Author(s) -
Lü Xiang
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200844005
Subject(s) - nanowire , phonon , condensed matter physics , silicon nanowires , square (algebra) , silicon , relaxation (psychology) , materials science , superconductivity , band gap , physics , nanotechnology , geometry , optoelectronics , mathematics , social psychology , psychology
We have evaluated the relaxation rate of silicon (Si) nanowires with square cross sections by considering the three‐phonon Umklapp process. The calculated model takes into account the energy gap between the phonon modes due to acoustic phonon confinement. It is found that the relaxation rate increases with increasing nanowire side length at small side length, and shows a peak behavior at about 5 nm before falling off at large side length. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)