Very strong nonlinear optical absorption in green GaInN/GaN multiple quantum well structures

The efficiency of green GaInN/GaN light emitting diodes (LEDs) is known to drop under high current densities. To explore the reason, 535 nm emitting GaInN/GaN multiple quantum well (MQW) and GaN epilayers were characterized using Z‐scan techniques under comparable excitation conditions with a continuous wave laser. Two wavelengths, 514 nm and 488 nm, were selected right below and above the apparent optical absorption edge. At 514 nm, a very large nonlinear absorption coefficient β = 2.6 cm/W was obtained. This leads to a 20% absorption enhancement at a photon flux of 21 kW/cm 2 . We attribute this to nonlinear free‐carrier absorption. On the other hand, at 488 nm, a nonlinear saturable absorption with β = –1.7 cm/W was observed. This induced transparency indicates photon bleaching in the MQW. Apparently, free carrier dynamics strongly affects optical nonlinearity, while nonlinear absorption provides a small contribution to the limitations of current green LEDs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)