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Multiple carrier transport in N‐face indium nitride
Author(s) -
Fehlberg Tamara B.,
Koblmüller Gregor,
UmanaMembreno Gilberto A.,
Gallinat Chad S.,
Nener Brett D.,
Speck James S.,
Parish Giacinta
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200778665
Subject(s) - molecular beam epitaxy , indium , electron mobility , indium nitride , nitride , electron , materials science , analytical chemistry (journal) , polar , electron transport chain , optoelectronics , chemistry , epitaxy , nanotechnology , layer (electronics) , physics , environmental chemistry , biochemistry , quantum mechanics , astronomy
We present temperature (20–300 K) dependent multi‐carrier measurements of electron species in N‐face indium nitride. N‐face InN samples were grown to different thicknesses (500–2000 nm) via plasma‐assisted molecular beam epitaxy on C‐face SiC substrates. Surface and bulk electron transport properties were extracted using a quantitative mobility spectrum analysis. Mobility of both bulk and surface electron species increase with film thickness. The temperature dependence of the mobility of both species differs to that of In‐polar samples studied previously, while the mobility of surface electrons is more than twice that of In‐polar samples with only a slight corresponding reduction in sheet concentration. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)