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White X‐ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film
Author(s) -
Barabash R. I.,
Ice G. E.,
Haskell B. A.,
Nakamura Shuji,
Speck J. S.,
Liu W.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200778579
Subject(s) - homogeneous , materials science , condensed matter physics , crystallography , lattice (music) , shear stress , free surface , epitaxy , shear (geology) , optics , composite material , chemistry , layer (electronics) , physics , mechanics , thermodynamics , acoustics
A novel white‐beam microdiffraction analysis of defects, strains and tilts in a free standing m ‐plane GaN film grown via hydride vapor phase epitaxy is presented. It is shown that misfit dislocations are grouped within cell boundaries creating local lattice rotations (tilts) between the growing cells. Distribution of lattice rotations in the film is not homogeneous. Regions of large rotations are separated by low rotations regions. The dominating rotation axis is parallel [11 $ \bar 2 $ 0] direction. High in plane shear stress component is observed along [0001]. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)