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m ‐plane GaN/InGaN/AlInN on LiAlO 2 grown by MOVPE
Author(s) -
Behmenburg H.,
Wen T. C.,
Dikme Y.,
Mauder C.,
Khoshroo L. Rahimzadeh,
Chou M. M. C.,
Rzheutskii M. V.,
Lutsenko E. V.,
Yablonskii G. P.,
Woitok J.,
Kalisch H.,
Jansen R. H.,
Heuken M.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200778565
Subject(s) - metalorganic vapour phase epitaxy , materials science , optoelectronics , photoluminescence , excitation , epitaxy , wavelength , excitation wavelength , nanotechnology , physics , layer (electronics) , quantum mechanics
We present a study of growth and properties of m ‐plane GaN/InGaN/AlInN structures on LiAlO 2 substrates grown by metal organic vapour phase epitaxy (MOVPE). A buffer structure, including an m ‐plane AlInN interlayer prior to GaN growth, has been developed. Quantum well structures on top of this buffer showed absence of polarization‐induced electric fields verified by room temperature photoluminescence (RT PL) measurements with different excitation intensities. Different samples with peak emission wavelength between 433 nm and 495 nm exhibited stable peak position even for high excitation intensities of 500 kW/cm 2 . (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)