Surface electronic properties of n‐ and p‐type InGaN alloys | Zendy

King P. D. C. | Zendy; Veal T. D. | Zendy; Lu Hai | Zendy; Jefferson P. H. | Zendy; Hatfield S. A. | Zendy; Schaff W. J. | Zendy; McConville C. F. | Zendy

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Surface electronic properties of n‐ and p‐type InGaN alloys

Author(s) -

King P. D. C.,

Veal T. D.,

Lu Hai,

Jefferson P. H.,

Hatfield S. A.,

Schaff W. J.,

McConville C. F.

Publication year - 2008

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200778452

Subject(s) - band bending , condensed matter physics , photoemission spectroscopy , fermi level , materials science , fermi surface , spectroscopy , electron , chemistry , x ray photoelectron spectroscopy , physics , superconductivity , nuclear magnetic resonance , quantum mechanics

X‐ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n‐ and p‐type c ‐plane In x Ga 1– x N alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In‐rich) to depletion (Ga‐rich) at x ≈ 0.43 for n‐type alloys and a transition from surface inversion to hole depletion at x ≈ 0.59 for p‐type alloys where downward band bending occurs across the composition range. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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