Premium
Surface electronic properties of n‐ and p‐type InGaN alloys
Author(s) -
King P. D. C.,
Veal T. D.,
Lu Hai,
Jefferson P. H.,
Hatfield S. A.,
Schaff W. J.,
McConville C. F.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200778452
Subject(s) - band bending , condensed matter physics , photoemission spectroscopy , fermi level , materials science , fermi surface , spectroscopy , electron , chemistry , x ray photoelectron spectroscopy , physics , superconductivity , nuclear magnetic resonance , quantum mechanics
Abstract X‐ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n‐ and p‐type c ‐plane In x Ga 1– x N alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In‐rich) to depletion (Ga‐rich) at x ≈ 0.43 for n‐type alloys and a transition from surface inversion to hole depletion at x ≈ 0.59 for p‐type alloys where downward band bending occurs across the composition range. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)