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Observation of room temperature magnetoresistance in a lateral ferromagnet–semiconductor structure
Author(s) -
Koo Hyun Cheol,
Kwon Jae Hyun,
Eom Jonghwa,
Chang Joonyeon,
Han SukHee
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200777405
Subject(s) - magnetoresistance , condensed matter physics , ferromagnetism , spin valve , semiconductor , transistor , spin (aerodynamics) , materials science , giant magnetoresistance , atmospheric temperature range , electron , magnetic semiconductor , optoelectronics , physics , magnetic field , voltage , quantum mechanics , thermodynamics , meteorology
For an efficient spin‐transport in a two‐dimensional electron gas system, control of ferromagnet–semiconductor interface resistance is a very crucial factor and the clear spin‐signal is detected in the range of 4 ∼ 50 Ω μm 2 in our experiments. The magnetoresistance of the local spin‐valve measurement slowly reduces with increasing temperature, but Δ R / R remains near 1% at room temperature. Based on the experimental results and calculations, our InAs channel system shows strong possibility for a spin transistor application. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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