Premium
Enhancement of exchange bias by ultra‐thin Mn layer insertion at the interface of Mn‐Ir/Co‐Fe bilayers
Author(s) -
Tsunoda M.,
Yoshitaki S.,
Ashizawa Y.,
Kim D. Y.,
Mitsumata C.,
Takahashi M.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200777391
Subject(s) - exchange bias , bilayer , antiferromagnetism , layer (electronics) , analytical chemistry (journal) , thin film , chemistry , manganese , materials science , anisotropy , crystallography , magnetic anisotropy , condensed matter physics , nanotechnology , optics , magnetization , membrane , magnetic field , metallurgy , biochemistry , physics , chromatography , quantum mechanics
Effects of ultra‐thin Mn, Ru, Pd, Ta, Gd, and Tb layer insertion at the interface on the exchange bias of Mn 75 Ir 25 /Co 70 Fe 30 bilayers were investigated. Unidirectional anisotropy constant, J K , of the bilayer was significantly enhanced from 0.46 erg/cm 2 to 0.84 erg/cm 2 with the insertion of 0.5‐nm‐thick Mn layer, while it was reduced with increasing the inserted layer thickness for the other materials. The value of 0.84 erg/cm 2 was not obtained in the variation of J K with respect to the chemical composition of Mn‐Ir layer in a range of Ir content of 0 ∼ 40 at.%. The cause of the enhancement of J K with ultra‐thin Mn insertion might be due to the modification of antiferromagnetic spin structure at the interface. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)