Enhancement of exchange bias by ultra‐thin Mn layer insertion at the interface of Mn‐Ir/Co‐Fe bilayers | Zendy

Tsunoda M. | Zendy; Yoshitaki S. | Zendy; Ashizawa Y. | Zendy; Kim D. Y. | Zendy; Mitsumata C. | Zendy; Takahashi M. | Zendy

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Enhancement of exchange bias by ultra‐thin Mn layer insertion at the interface of Mn‐Ir/Co‐Fe bilayers

Author(s) -

Tsunoda M.,

Yoshitaki S.,

Ashizawa Y.,

Kim D. Y.,

Mitsumata C.,

Takahashi M.

Publication year - 2007

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200777391

Subject(s) - exchange bias , bilayer , antiferromagnetism , layer (electronics) , analytical chemistry (journal) , thin film , chemistry , manganese , materials science , anisotropy , crystallography , magnetic anisotropy , condensed matter physics , nanotechnology , optics , magnetization , membrane , magnetic field , metallurgy , biochemistry , physics , chromatography , quantum mechanics

Effects of ultra‐thin Mn, Ru, Pd, Ta, Gd, and Tb layer insertion at the interface on the exchange bias of Mn 75 Ir 25 /Co 70 Fe 30 bilayers were investigated. Unidirectional anisotropy constant, J K , of the bilayer was significantly enhanced from 0.46 erg/cm 2 to 0.84 erg/cm 2 with the insertion of 0.5‐nm‐thick Mn layer, while it was reduced with increasing the inserted layer thickness for the other materials. The value of 0.84 erg/cm 2 was not obtained in the variation of J K with respect to the chemical composition of Mn‐Ir layer in a range of Ir content of 0 ∼ 40 at.%. The cause of the enhancement of J K with ultra‐thin Mn insertion might be due to the modification of antiferromagnetic spin structure at the interface. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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