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Influence of the nano‐oxide layer position on magnetoresistance ratio and magnetic properties in spin valves
Author(s) -
Suh Jeong Dae,
Ross C. A.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200777318
Subject(s) - spin valve , coercivity , giant magnetoresistance , materials science , oxide , nano , condensed matter physics , layer (electronics) , magnetoresistance , surface finish , surface roughness , specular reflection , nanotechnology , composite material , magnetic field , metallurgy , optics , physics , quantum mechanics
We have investigated the influence of nano‐oxide layer position on magnetoresistance of the NiFe/Cu/Co/Cu spin valves. We found that the giant magnetoresistance (GMR) ratio, magnetic coercivity and surface roughness were strongly dependent on the nano‐oxide layer positions. For nano‐oxide layer positions from the bottom to top part of spin valve, the GMR ratio varied from 2.8% to 0.15% depending on the position of the nano‐oxide layer within the spin valves. It was also found that the nano‐ oxide layer(NOL) position affect the surface roughness and magnetic coercivity significantly. Variation of the GMR ratio with nano‐oxide layer position can be explained well by the variation of the spin electron transport confinement due to the specular reflection effect of the nano‐oxide layer. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)