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Tunnel magnetoresistance of ferromagnetic semiconductor junctions
Author(s) -
Honda S.,
Itoh H.,
Inoue J.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200777263
Subject(s) - magnetoresistance , condensed matter physics , tunnel magnetoresistance , conductance , ferromagnetism , materials science , semiconductor , physics , magnetic field , optoelectronics , quantum mechanics
Tunnel conductance and magnetoresistance of (Ga‐Mn)As/AlAs/(Ga‐Mn)As are calculated as a function of AlAs barrier thickness in the linear response regime using a realistic tight‐binding model. It is shown that the barrier thickness dependence of the tunnel magnetoresistance ratio is quite weak in contrast to experimental results. It is also shown that the tunnel magnetoresistance ratio is decreased by GaAs layer inserted at the interfaces between (Ga‐Mn)As and AlAs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)