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Effects of spin‐flip tunneling on temperature and voltage dependence of TMR
Author(s) -
Takada I.,
Ozeki J.,
Itoh H.,
Inoue J.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200777262
Subject(s) - quantum tunnelling , condensed matter physics , spin flip , magnetoresistance , tunnel magnetoresistance , spin (aerodynamics) , voltage , materials science , physics , quantum mechanics , thermodynamics , ferromagnetism , scattering , magnetic field
We study the temperature and voltage dependence of the tunnel magnetoresistance (TMR) using a phenomenological theory which takes into account the spin‐flip tunneling. We show that the temperature dependence becomes strong when the spin‐flip tunneling exists. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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