Numerical simulation of spin accumulation and tunnel magnetoresistance in single electron tunnelling junctions with a nonmagnetic nanoparticle | Zendy

Wang H. | Zendy; Mitani S. | Zendy; Takanashi K. | Zendy; Imamura H. | Zendy

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Numerical simulation of spin accumulation and tunnel magnetoresistance in single electron tunnelling junctions with a nonmagnetic nanoparticle

Author(s) -

Wang H.,

Mitani S.,

Takanashi K.,

Imamura H.

Publication year - 2007

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200777102

Subject(s) - quantum tunnelling , tunnel magnetoresistance , condensed matter physics , magnetoresistance , tunnel junction , electron , coulomb blockade , ferromagnetism , voltage , spin polarization , biasing , spin (aerodynamics) , materials science , tunnel effect , electrode , physics , magnetic field , quantum mechanics , transistor , thermodynamics

For the device designs showing a large tunnel magnetoresistance (TMR) due to spin accumulation, spin dependent single electron tunnelling in double tunnel junctions with a nonmagnetic nanoparticle is investigated by numerical simulations in the sequential tunnelling regime. We show that the bias voltage dependecnce of TMR ratio takes a maximum value just above the Coulomb threshold voltage and the optimal junction parameters for a large TMR ratio are obtained. We also show that the maximum value of the TMR ratio almost agrees with 2 P 2 /(1+ P 2 ) where P is the spin polarization of ferromagnetic electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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