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Spin lifetime of (In,Ga)As/GaAs (110) quantum wells
Author(s) -
Schreiber L.,
Duda D.,
Beschoten B.,
Güntherodt G.,
Schönherr H.P.,
Herfort J.
Publication year - 2007
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200775626
Subject(s) - quantum well , condensed matter physics , molecular beam epitaxy , photoluminescence , faraday effect , spin (aerodynamics) , relaxation (psychology) , epitaxy , chemistry , materials science , physics , optoelectronics , magnetic field , optics , nanotechnology , psychology , social psychology , laser , layer (electronics) , quantum mechanics , thermodynamics
Undoped and strained (In,Ga)As/GaAs quantum wells of different width and height were grown on GaAs(110) by molecular beam epitaxy and characterized by photoluminescence and atomic force microscopy. The effect of geometry and interface quality on the out‐of‐plane electron spin lifetime is investigated for a wide temperature range by both time‐resolved Faraday rotation and time‐resolved transmission. Due to the suppression of the D'yakonov Perel' spin relaxation mechanism, the electron spin lifetime of the (110) quantum well is peaked at a temperature, which depends on In concentration, whereas the quantum well width, interface roughness and compositional fluctuations in the quantum well determine the maximum value of the spin lifetime. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)