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Bulk and epitaxial growth of micropipe‐free silicon carbide on basal and rhombohedral plane seeds
Author(s) -
Epelbaum B. M.,
Filip O.,
Winnacker A.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200743508
Subject(s) - epitaxy , basal plane , silicon carbide , trigonal crystal system , materials science , plane (geometry) , silicon , crystallography , carbide , condensed matter physics , composite material , optoelectronics , chemistry , geometry , mathematics , physics , crystal structure , layer (electronics)
In this paper the criteria for reasonable choice of alternative to (0001) seed orientation are discussed. Growth conditions necessary to produce bulk 6H‐ and 4H‐SiC crystals on rhombohedral (01‐1 n ) plane seeds in PVT process are presented. Specific defect structures in such crystals are described in relation to growth conditions. In the second part of the paper, liquid phase epitaxial (LPE) growth using high‐temperature silicon based flux and rhombohedral plane seeds is compared to the LPE on basal plane seeds. In both bulk and epitaxial growth processes the employment of rhombohedral plane seed offers important advantages. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)