Thermally and seed‐layer induced crystallization in rubrene thin films | Zendy

Nothaft M. | Zendy; Pflaum J. | Zendy

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Thermally and seed‐layer induced crystallization in rubrene thin films

Author(s) -

Nothaft M.,

Pflaum J.

Publication year - 2008

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200743463

Subject(s) - rubrene , crystallization , pentacene , amorphous solid , materials science , thin film , thermal stability , thin film transistor , layer (electronics) , chemical engineering , optoelectronics , nanotechnology , crystallography , chemistry , engineering

We have analyzed the tendency of crystallization and the thermal activation of ordering processes in rubrene thin films. As we will demonstrate, a crystalline phase with a unit cell in agreement to the bulk structure can be stabilized upon heating of amorphous rubrene layers previously capped by a sputtered SiOx layer. This encapsulation significantly enhances the thermal stability of the organic film by about 150 °C. We compared this approach with crystallization initiated by the presence of a pentacene seed layer during rubrene deposition. Thin film transistors prepared by this route showed hole mobilities of 0.01 cm 2 /Vs which are four orders of magnitude higher than for their amorphous counterparts. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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