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Thermally and seed‐layer induced crystallization in rubrene thin films
Author(s) -
Nothaft M.,
Pflaum J.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200743463
Subject(s) - rubrene , crystallization , pentacene , amorphous solid , materials science , thin film , thermal stability , thin film transistor , layer (electronics) , chemical engineering , optoelectronics , nanotechnology , crystallography , chemistry , engineering
We have analyzed the tendency of crystallization and the thermal activation of ordering processes in rubrene thin films. As we will demonstrate, a crystalline phase with a unit cell in agreement to the bulk structure can be stabilized upon heating of amorphous rubrene layers previously capped by a sputtered SiOx layer. This encapsulation significantly enhances the thermal stability of the organic film by about 150 °C. We compared this approach with crystallization initiated by the presence of a pentacene seed layer during rubrene deposition. Thin film transistors prepared by this route showed hole mobilities of 0.01 cm 2 /Vs which are four orders of magnitude higher than for their amorphous counterparts. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)