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Disorder and instability processes in amorphous conducting oxides
Author(s) -
Robertson John
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200743458
Subject(s) - amorphous solid , materials science , ionic bonding , condensed matter physics , instability , semiconductor , oxide , conduction band , chemical physics , thin film transistor , fermi level , covalent bond , nanotechnology , electron , optoelectronics , chemistry , crystallography , physics , ion , metallurgy , organic chemistry , layer (electronics) , quantum mechanics , mechanics
The behaviour of ionic amorphous oxide semiconductors (transparent conducting oxides) such as In 2 O 3 , SnO 2 , and ZnO is contrasted with that of covalent amorphous semiconductors such as amorphous Si. These oxides have an s‐like conduction band minima, which leads to high electron mobilities, smaller effects of disorder, and the ability to move the Fermi level well into the conduction band. This results in an absence of the bias stress instability due to the bond breaking mechanism in oxide thin film transistors, which limited the stability of a‐Si:H transistors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)