Premium
Controlling charge‐transfer at the gate interface of organic field‐effect transistors
Author(s) -
Mühlenen Adrian von,
Castellani Mauro,
Schaer Michel,
Zuppiroli Libero
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200743439
Subject(s) - pentacene , charge (physics) , oxide , materials science , acceptor , monolayer , field effect transistor , gate oxide , transistor , chemical physics , optoelectronics , analytical chemistry (journal) , chemistry , thin film transistor , nanotechnology , condensed matter physics , layer (electronics) , electrical engineering , physics , voltage , organic chemistry , engineering , quantum mechanics , metallurgy
The performance and charge transport characteristics of pentacene transistors with oxide gates such as SiO 2 and Al 2 O 3 have been recently shown to largely depend on the density of residual carriers due to electron acceptor defects at the oxide surface. The threshold field in particular is strongly connected to the density of these surface states. We demonstrate that by vapor deposition of self‐assembled monolayers on the oxide gate prior to pentacene growth this charge transfer process is inhibited, the residual charge concentration is decreased by up to two orders of magnitude, and the field‐effect mobility increases by up to a factor of four. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)