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Influence of dielectric surface modification on growth, structure and transport properties of perylene films
Author(s) -
Effertz Christian,
Beigmohamadi Maryam,
Niyamakom Phenwisa,
Schulz Philip,
Wuttig Matthias
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200743428
Subject(s) - perylene , materials science , thin film transistor , dielectric , thin film , surface energy , substrate (aquarium) , adhesion , optoelectronics , layer (electronics) , surface modification , diffraction , nanotechnology , chemical engineering , composite material , optics , molecule , chemistry , organic chemistry , oceanography , geology , engineering , physics
In this study the properties of organic thin film transistors (OTFTs) based on perylene films have been investigated. To tailor the film properties, the dielectric layer on which the perylene films were deposited on was modified by different chemical treatments. Both film properties and the device efficiency have been studied employing a range of techniques including atomic force microscopy, X‐ray diffraction and a drop shape analysis for the determination of the surface free energy. A clear correlation between the adhesion energy with the dielectric surface modification is found. The change in adhesion energy influences the thin‐film growth on the modified substrate and therefore the film morphology and structure. This in turn has a profound impact on the transistors performance as the charge carrier mobility and the on‐to‐off current ratio are effected. Hence by tailoring of the dielectric surface for the growth of perylene films, the thin‐film transistor performance can be optimized. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)