Phonons in B  x   Ga 1– x   N/GaN epilayers studied by means of UV Raman scattering | Zendy

Cuscó R. | Zendy; AlarcónLladó E. | Zendy; Ibáñez J. | Zendy; Artús L. | Zendy; Gautier S. | Zendy; Ougazzaden A. | Zendy

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Phonons in B x Ga 1– x N/GaN epilayers studied by means of UV Raman scattering

Author(s) -

Cuscó R.,

AlarcónLladó E.,

Ibáñez J.,

Artús L.,

Gautier S.,

Ougazzaden A.

Publication year - 2008

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200743398

Subject(s) - expansive , raman scattering , boron , raman spectroscopy , materials science , phonon , scattering , condensed matter physics , x ray raman scattering , analytical chemistry (journal) , composition (language) , chemistry , physics , optics , linguistics , compressive strength , philosophy , organic chemistry , chromatography , composite material

We present UV Raman scattering measurements on B x Ga 1– x N epilayers with boron composition up to 3.6%. The resonant enhancement of the longitudinal optical modes allows us to detect multiphonon scattering by A 1 (LO) modes. For low boron compositions (≲2%), both the E 2 and the A 1 (LO) modes show a consistent frequency increase with boron composition due to alloying effects. Higher disorder and expansive strain are observed in alloys with higher boron content. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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