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Phonons in B x Ga 1– x N/GaN epilayers studied by means of UV Raman scattering
Author(s) -
Cuscó R.,
AlarcónLladó E.,
Ibáñez J.,
Artús L.,
Gautier S.,
Ougazzaden A.
Publication year - 2008
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200743398
Subject(s) - expansive , raman scattering , boron , raman spectroscopy , materials science , phonon , scattering , condensed matter physics , x ray raman scattering , analytical chemistry (journal) , composition (language) , chemistry , physics , optics , linguistics , compressive strength , philosophy , organic chemistry , chromatography , composite material
We present UV Raman scattering measurements on B x Ga 1– x N epilayers with boron composition up to 3.6%. The resonant enhancement of the longitudinal optical modes allows us to detect multiphonon scattering by A 1 (LO) modes. For low boron compositions (≲2%), both the E 2 and the A 1 (LO) modes show a consistent frequency increase with boron composition due to alloying effects. Higher disorder and expansive strain are observed in alloys with higher boron content. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)